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GaN Devices Address Datacentre Challenges
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Cambridge GaN Devices presents GaN-based power devices at APEC 2024, focusing on datacentres and AI applications. The company demonstrates ICeGaN H2 single-chip eMode HEMT family and a 350 W PFC/LLC reference design. The CEO and CTO have strong ties to the University's High Voltage Microelectronics and Sensors group, while the company's ICeGaN HEMT technology is protected by a robust IP portfolio. Andrea Bricconi serves as the Chief Commercial Officer.
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How could the demonstration of ICeGaN H2 single-chip eMode HEMT family and a 350 W PFC/LLC reference design influence the adoption of GaN technology in various applications?
How might the potential of GaN in supporting power demands for datacentres and AI applications impact the future of power solutions?
What are the implications of the robust IP portfolio for the competitive landscape of GaN-based power devices?
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