Innoscience designs, develops, and manufactures GaN devices for various applications including consumer electronics, renewable energy, and automotive electronics. The company is self-described as the largest manufacturer of 8-inch GaN-on-Si technology.

Innoscience

Innoscience | 4,124 followers on LinkedIn. The largest 8-inch Integrated Device Manufacture (IDM) fully focused on GaN technology in the world. | Innoscience is the largest Integrated Device Manufacture (IDM) fully focused on GaN technology in the world. We fully control and own the world-wide largest dedicated 8-inch GaN-on-Si wafers manufacturing capacity.

We are a team of experts and passionate people that have the mission to widespread GaN technology in the market by providing best-in-class and reliable devices at the lowest price, which is combined with a high volume capacity and security of supply as required by the industry.

R&D Reliability Director at Innoscience

Francesco Cordiano

Vice President, Supply Chain Management

Dick Yang

Sr. Application Engineer/Sr. Power Electronics Engineer

Merlin Tchadja Wandji

Innoscience - Senior Engineer

zhang xin

Thank you to everyone who attended our presentation at the Power Electronics Forum during electronica! Dr. Denis Marcon presented on "Enabling Smaller, More Efficient and Cheaper Power Converter Systems with Price-Competitive GaN Power Devices." The presentation demonstrated how our InnoGaN™ and SolidGaN™ power devices are setting a new standard in efficiency and compactness, outperforming traditional silicon in AC-DC and DC-DC converters.

It’s happening today! Join Dr. Denis Marcon at 10:40 AM at the Power Electronics Forum during electronica for his presentation: "Enabling Smaller, More Efficient and Cheaper Power Converter Systems with Price-Competitive GaN Power Devices." Discover how Innoscience's InnoGaN™ and SolidGaN™ power devices are setting a new standard in efficiency and compactness, outperforming traditional silicon in AC-DC and DC-DC converters. See you there!

Our INN100W135A-Q and smaller package INN100W800A-Q are specifically tailored for the requirements of L2+/L3 assisted driving systems, with switching speeds up to 13 times faster and pulse widths reduced to one-fifth of those of silicon solutions. Parameters like Qg and Qoss are also improved by 1.5 to 3 times over their silicon counterparts. This results in medium to long-range recognition capabilities of 200/300m, essential for advanced driver assistance and autonomous driving applications. Read more here: https://lnkd.in/eYa5Cjrw

Our new battery management system (BMS) solutions are designed to meet the growing demand for eco-friendly travel, mobile energy storage, and compact power applications. With just 16 VGaNs, we can replace 18 pairs of Silicon MOSFETs (36 in total), significantly reducing board area and system loop impedance. This optimization enhances performance, reduces system size, and significantly lowers overall system costs. Click here to read the full article : https://lnkd.in/eEXkjM8V

ITC’s Final Decision Confirms Innoscience’s Customers Remain Unaffected by the Innoscience-EPC Patent Row, Finds No Infringement of the ’508 Patent, and Paves the Way for Designing Around the Remaining ’294 Patent Currently Stands Challenged as Invalid at USPTO Read more here: https://lnkd.in/e5HKFXhj

Dr. Jan Šonský will give a tutorial at the ECPE (European Center for Power Electronics) in Manchester on November 19th and 20th: "Wide Bandgap User Training - GaN-based Power Electronics | ECPE Tutorial." More information can be found here: https://lnkd.in/erCvPBcM

Join us at electronica on November 15th at 10:40 for Dr. Denis Marcon’s talk at the Power Electronics Forum: “Enabling Smaller, More Efficient and Cheaper Power Converter Systems with Price-Competitive GaN Power Devices.” Learn how Innoscience’s InnoGaN™ discrete and SolidGaN™ integrated GaN devices (30V-700V) are making power converters smaller, more efficient, and more affordable. This presentation will show how to enhance AC-DC and DC-DC converters by improving performance and simplifying design. Find more event information here: https://lnkd.in/eDF9cBYQ

Our INN100W135A-Q and smaller package INN100W800A-Q are both certified to AEC-Q101 and optimized for LiDAR, high power density DC-DC converters, and Class D audio applications in advanced driver assistance systems. These devices are specifically tailored for the requirements of L2+/L3 assisted driving systems, with switching speeds up to 13 times faster and pulse widths reduced to one-fifth of those of silicon solutions. Parameters like Qg and Qoss are also improved by 1.5 to 3 times over their silicon counterparts. This results in medium to long-range recognition capabilities of 200/300m, essential for advanced driver assistance and autonomous driving applications. Read more here: https://lnkd.in/eUNigWtn

Our GaN technology has the advantage over traditional Silicon technology of smaller parasitic capacitance, faster switching speed and smaller on-resistance per unit area. When applied to wireless charging system, our GaN technology reduces both the switching and conduction loss, thus enabling wireless charging system with higher system efficiency and longer transmission distance. Click here to learn more: https://lnkd.in/eYwzp6Ua

Our 240W All GaN AC/DC converter uses InnoGaN at both the primary and secondary stages. Alongside a Totem Pole PFC, this driver delivers 2% more efficiency with a 350% higher power density compared to traditional Silicon solutions. Achieve 38W/in³ power density with GaN compared to Silicon's 11W/in³.

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