Pakal Technologies, Inc. develops a new high-voltage silicon power switch for electric power conversion.

Pakal Technologies, Inc.

Pakal Technologies, Inc | 235 followers on LinkedIn. Revolutionizing High-Power Semiconductor Efficiency with Better Physics in Silicon.   | Pakal Technologies is a developer of IGTO-based semiconductors intended to revolutionize the IGBT market.

Strategic Operations Development, Pakal Technologies

Alex Sinar

Executive Vice President of Product at Pakal Technologies, providing and designing next generation of IGTO power devices

Paul Moore

EVP Operations | Finance | Information Technology @ Pakal Technologies, Inc | Fundraising - Next Series - Achieved

Susanne Furner

Chief Commercial Officer and Founder at Foxy Power GmbH

Michael Doktor

Pakal Technologies, Inc

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Euro

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VP of Sales World Wide & Operations

Stella Hurtz

Chief Executive Officer

Ben Quinones

Marketing and Product

Executive Vice President of Product

Engineering

Richard Blanchard

EVP Finance | Information Technology

EVP of Product

Benjamin Quinones

Founder and CEO

VP of Sales & Operations

EVP Finance & Information Technology

California Companies With More Than $1M in Revenue (Top 10K)

San Francisco Companies (Top 10K)

Semiconductor Companies With Fewer Than 100 Employees

San Francisco Bay Area Companies With Fewer Than 1000 Employees (Top 10K)

Pakal Technologies is a developer of IGTO-based semiconductors intended to revolutionize the IGBT market. The company's semiconductors use IGTO, a silicon device, that is a drop-in replacement for IGBTs and provides a significant performance upgrade, providing clients with efficient, scalable, and compatible semiconductors.

Venture Round - Pakal Technologies

Seed Round - Pakal Technologies

Computer and Software Products and Electrical and Scientific Products

San Francisco

California

United States

North America

Pakal Technologies

Npnp layered mos-gated trench device having lowered operating voltage

Etch stop layer for injecting carriers into drift layer for a vertical power …

Anti-parallel diode formed using damaged crystal structure in a verical power …

Mos-gated trench device using low mask count and simplified processing

A silicon-based semiconductor device designed to replace IGBTs, offering lower conduction and switching losses, and compatibility with existing IGBT supply chains.

A patented technology integrated into IGTOs, enabling scalability for high-current applications or parallel connections.

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Pakal Technologies, Inc.